MJE172.mje182 * dc current gain- hfe=30(min)? ic = 0.5a =12(min)eic?1.5a maximum ratings characteristic collector-emitter voltage collector-base voltage emitter-base voltage collector current - continuous -peak base current total power dissipation@tc = 25c derate above 25c operating and storage junction temperature range symbol vceo vcbo vebo ic 'b pd tj 'tsto mje17c mje171 mje180 mje181 40 60 60 80 MJE172 mje182 80 100 7.0 3.0 6.0 1.0 12.5 0.10 -65 to +150 unit v v v a a w w/c c thermal characteristics characteristic thermal resistance junction to case symbol r9jc max 10 unit c/w figure -1 power derating 25 50 75 100 125 150 tc , temperature('c) pnp npn mje170 mje180 mje171 mje181 MJE172 mje182 3.0 ampere complementary silicon power transistors 40-80 volts 12.5 watts to-220 b j i?i^o hr . _ r[,4. nj pin 1.base 2 collector 3.emnter 4,collector(case) dim a b c d e f g h i j k l m 0 millimeters min 14.68 9.78 5.01 13.06 3.57 2.42 1.12 0.72 4.22 1.14 2.20 033 2.48 370 max 15.31 10.42 6.s2 14.62 4.07 3.66 1.36 0.96 4,98 1.38 2,97 0.55 2.98 3,90 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors entourages customers to verify that datasheets are current before placing orders. quality semi-conductors
mje170, mje171, MJE172 pnp / mje180, mje181, mje182 npn electrical characteristics ( tc ? 25c unless otherwise noted ) characteristic symbol min max unit off characteristics collector - emitter sustaining voltage (1) (lc = 10ma,lb = 0) mje170.mje180 mje171.mje181 MJE172.mje182 collector cutoff current (vci = 60v, l, = 0) mje170.mje180 (vci = 80v, le = 0) mje171.mje181 (vck=100v, l. = 0) MJE172.mje182 ( ves = 60 v, ls = 0, tc= 1 50"c ) mje1 70.mje1 80 ( vcb = 80 v, ib = 0, tc = 150c ) mje171.mje181 ( vci = 1 00 v, ib = 0, tc = 1 50c ) mje1 72.mje1 82 emitter cutoff current ( veb = 7.0 v , lc = 0 ) versus, 'cbo iibo 40 60 80 10 10 10 100 100 100 10 v ua ua on characteristics (1) dc current gain ( lc = 100 ma,vci= 1.0v) ( lc = 500 ma,vci* 1.0v) (ic = 1.5a,vce*1.0v) collector-emitter saturation voltage ( lc = 500 ma, ib = 50 ma ) (lc=1.5a,lb = 150ma) (lc = 3.0a,lb = 600ma) base-emitter saturation voltage (lc- 1.5 a. ib" 150m a) ( lc = 3.0 a, ib = 600 m a ) base-emitter on voltage ( lc = 500 ma,vc6= 1.0v) hfe v?m vm v8e(on) 50 30 12 250 0.3 0.9 1.7 1.5 2.0 1.2 v v v dynamic characteristics current-gain-bandwidth product (2) ( lc= 100 ma, vce = 10 v, f = 10 mhz) output capacitance ( vcb = 10 v, ie = 0, f = 0.1 mhz ) mje1707MJE172 mje180/mje182 ft cob 50 60 50 mhz pf (1) pulse test pulse width = 300 us , duty cycle 2.0% (2)ft= k.i -f^.
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